10a.1 Advanced Semiconductor on Insulator Substrates for Low Power and High Performance Digital CMOS Applications
نویسندگان
چکیده
It has become increasingly difficult to scale CMOS transistors beyond 130nm, yet still maintain high drive currents and reduce supply voltage (Vdd). Much attention has been focused on high mobility for boosting performance of the short channel devices. In this paper we will review the latest development in substrate engineering using the Smart Cut technique, new device architecture and challenges for III-V/Ge CMOS cointegration on the Si platform.
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تاریخ انتشار 2011